Abstract
The effect of electronic structure on the stability of FeBSi amorphous alloys is compared with thermal effects as measured by soft X-ray fluorescent spectroscopy and differential thermal analysis. A linear dependence is found between the half band width (HBW), crystallization temperature ( T c), and the amount of heat of crystallization ( ΔQ) with electron concentrations. The results are explained in the light of recent theories. This explanation leads to the conclusion that the stability of the amorphous and intermediate states are stabilized by electronic structure.
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