Abstract
Core level photoemission with MgKα radiation ( hv = 1253.6 eV) and valence photoemission ( hv = 21.2 eV) are presented for Si(1 1 1)-Mo interfaces at various Mo coverages (up to 3.2·10 15 at cm −2) exposed to 6000 L of H 2O. The metal deposition strongly enhances the oxidation of Si with the complete H 2O dissociation and the formation of a SiO 2-like compound. The results are consistent with an interface growth with the formation of silicide islands.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
