Abstract

The room-temperature adsorption of molecular, unexcited oxygen on InSb(110) surfaces either cleaned by sputtering-annealing techniques or cleaved by the wedge technique has been investigated as a function of the surface disorder. Auger electron spectroscopy, reflection high energy electron diffraction, low energy electron diffraction, and field effect spectroscopy are employed to analyse from the correlations of chemical, structural, and electronic properties the initial stages of oxygen sorption. A two-stage adsorption process has been found on either disordered or ordered surfaces. In the initial stage of adsorption the coverage increases with exposure depending on the surface disorder, and oxygen is suggested to adsorb at defect sites. The main chemisorption shows a saturation in coverage at high exposures with the oxygen presumably adsorbed at regular lattice sites. The oxygen adsorption causes changes of band bending indicating for the p-substrates the formation of inversion layers.

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