Abstract
The formation of the Mn/n-GaAs(110) interface has been studied using soft X-ray photoemission with synchrotron radiation. The electrical properties of the interfaces have also been investigated and the transport studies have included not only the clean, cleaved (110) surface but also the air-cleaved GaAs(110) surface. It has been found that Mn strongly dissociates the clean GaAs(110) surface forming a layer of manganese arsenide. The magnitude of the Schottky barrier for diodes fabricated on the clean surface, obtained by using the I-V technique, lies in the range 0.72-0.74 V. However the barrier height for the air-cleaved surface was more variable lying in the range 0.60-0.72 V. These findings are discussed in the light of the popular theories of Schottky barrier formation.
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