The Interaction of Liquid and Vapor Water with Nearly Defect-Free and Defective TiO2(100) Surfaces

Abstract

AbstractThe interaction of both liquid and vapor water on nearly defect-free and defective TiO2(100) surfaces has been investigated using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). The study has focused on examining electronic or chemical defects as created in vacuum and after exposure to both liquid and vapor water. Defective surfaces were prepared by electron-beam exposure and Ar+ bombardment. For a nearly defect-free (100)1×1 surface, water coverage was ∼0.02 ML (1ML = 2.9×1015/cm2) at 104 L exposure to low vapor pressure water, ∼0.08 ML at 108 L exposure to higher vapor pressure water, and ∼0.12 ML with liquid water exposure, respectively. Defect intensities were greatly reduced after exposing defective surfaces to ∼102 L low vapor pressure water. More significantly, electron-beam induced defects were completely removed upon higher-pressure vapor exposure (>104 L) or liquid water exposure, while defects created by Ar+ bombardment were only partially removed. The adsorption behavior and surface defect reactivity for TiO2(100) 1×1 surfaces were compared with those for TiO2(110) surfaces. The adsorption rates for nearly defect-free (100) 1×1 and (110) surfaces are comparable. However, the rate of defect “healing” for a defective (100) surface is much faster than that for a defective (110) surface.