Abstract
We consider electronic intrasubband transitions involving the confined and interface optical phonons of circular and elliptical GaAs quantum wires. Detailed treatments are given for a GaAs wire embedded in AlAs where the electrons are confined via an infinite potential barrier. The optical phonons are described using the dielectric continuum (DC) model, which for the GaAs/AlAs system compares favourably with more sophisticated macroscopic models and ab initio microscopic calculations in its prediction for the total scattering rates. The DC model has been applied previously to the circular case, bur here we evaluate the rates analytically. It is shown that the behaviour of the electrons and phonons in elliptical wires is both quantitatively and qualitatively different from that in circular wires, especially as regards angular properties.
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