The Interaction of an Ionized Pair of Impurities in Semiconductors with A. C. Field.

Abstract

The mechanism of energy loss under a. c field is discussed for an ionized pair of donors or acceptors in semiconductors. As a model for it, the susceptibility of a simple two level system interacting with phonons is derived by the method of correlation function. The spectrum of the susceptibility has two distinct peaks which correspond to the direct resonance process including only off-diagonal elements of a dipole moment, and to the Debye type relaxation process including only the diagonal elements of it. Numerical considerations and a brief comparison with experiments are given with the application to the impurity conduction in p –Si.