Abstract
Detailed studies are reported of interfaces formed between cleaved surfaces of GaAs and InP, and the metals, Ag, Al, and Mn. Microscopic interactions have been examined by soft x-ray photoemission, with synchrotron radiation, and electrical transport at interfaces have been studied by I–V and C–V methods. Ag is unreactive with clean GaAs and InP, and with oxidized GaAs, but is reactive with oxidized InP. Al and Mn chemically react with air cleaved and vacuum cleaved surfaces. Metals on InP are generally more reactive than on GaAs and Schottky barriers formed are very variable and dependent on intermediate oxide layers. Variable Schottky barriers are also measured for Mn on GaAs. The data are discussed in terms of current models of barrier formation at metal–semiconductor interfaces.
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