Abstract
Indium-gallium nitride (InGaN) multiple-quantum-well ridge-waveguide laser diodes (LDs) grown by metalorganic chemical vapor deposition on sapphire substrates were successfully transferred onto Cu substrates using a laser lift-off (LLO) process. Characterization of the InGaN LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance. The threshold current, under pulsed operation, for a 3 µm ridge-waveguide device and the laser-emission spectrum remained essentially unchanged after the LLO process. In addition, the conductive Cu substrate permitted realization of LDs with vertical-current injection using the Cu as the backside contact.
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