Abstract
The Schottky barrier at the InP(110)/Sb interface was determined by Raman scattering for Sb coverages up to 60 monolayers (ML). Band bending variations are found to occur until ∼20 ML. This can be correlated with the Sb structure; from ordered through amorphous to crystalline growth. For higher coverages of Sb the band bending decreases and finally flatband conditions are obtained. This fact is confirmed by I–V measurements at 150 and 400 ML.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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