Abstract
In this paper, the initial stages of local anodic oxidation (LAO) process initiated by AFM probe are studied on the wide (∼100μm) terraces of the atomic-smooth Si (111) surface when creating dense array of local oxidation points. The dependence of LAO points height on the value of voltage initiating the oxidation is found to have a pronounced step-like feature with a characteristic period of 0.7 ± 0.1 nm. The presented analysis shows for the first time the realization of the step-layer mechanism of anodic oxide growth on the Si (111) surface.
Highlights
Local anodic oxidation (LAO) of semiconductors and metals surface[1] initiated by an atomic force microscope (AFM) probe[2] is method by which nanoscale structures can be fabricated on the surface of semiconductors, for example a functioning one-electron nanotransistor created on the basis of LAO.[3,4]
The problem of one-dimensionality and integral approach to the description of classical anodic oxidation do not allow to illustrate the real characterization of LAO processes.[7,8]
An essential difference between LAO and classical plane-parallel anodic oxidation is the extreme value of this field: for characteristic radius of the tip of the AFM probe 10 nm, and the potential difference of 10 V applied to the probe-surface system, the electric field strength in the tip area reaches values of 109 V/m being sufficient for the dissociation of water molecules into H+ and OH- ions[10] and initiation of the drift of metal ions through the oxide to the surface[11] (Fig. 1)
Summary
Local anodic oxidation (LAO) of semiconductors and metals surface[1] initiated by an atomic force microscope (AFM) probe[2] is method by which nanoscale structures can be fabricated on the surface of semiconductors, for example a functioning one-electron nanotransistor created on the basis of LAO.[3,4]. The process of anodic oxidation was studied in detail in the 30-60s of the last century,[5,6] the fabrication of nanostructures requires a more detailed study of the processes of anodic oxidation. The problem of one-dimensionality and integral approach to the description of classical anodic oxidation do not allow to illustrate the real characterization of LAO processes.[7,8]
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