Abstract
The initial stages of SiC-Si02 interface formation by low temperature (300 oC) remote plasma assisted oxidation (RPAO) have been studied by on-line Auger electron spectroscopy (AES) for flat and vicinal 6H SiC(0001) wafers with Si(0001) and C faces (0001). The paper focuses on i) interfacial bonding and ii) oxidation rates for thickness to about 2 nm. Plasma-assisted oxidation of 6H SiC is compared with i) thermal oxidation of SiC and ii) plasma-assisted oxidation of flat and vicinal Si(111).
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