Abstract
AbstractThe main issue in homoepitaxial growth of aluminum nitride (AlN) on native seed substrates is the formation of an aluminum oxynitride (AlON) layer at temperatures between 1850‐1950 °C leading to polycrystalline growth. On the contrary, heteroepitaxial growth of AlN on silicon carbide (SiC) is relatively easy to achieve due to natural formation of a thin molten layer of (Al2OCx) on the seed surface and consequent growth of AlN via the molten buffer layer. Optimization of the seeding process can be achieved by use of ultra‐pure starting material. Another critical issue of AlN growth on SiC is cracking of the grown layer upon cooling as a result of different thermal expansion coefficients. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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