Abstract
Magneto-tunnelling ( B· J) is investigated in a symmetric double barrier resonant tunnelling device based on (InGa)As-(InAl)As. The effects of the Γ conduction band non-parabolicity are observed through the appearance of terms proportional to B 3 and B 4 in the dependence of Vp, the voltage at the current peak position of the I–V characteristics, on the magnetic field. A theoretical analysis considering pertubation theory and a simplified form of the formalism developed by Ekenberg [Phys. Rev. B40 , 7714(1989)] is done which is in qualitative agreement with the experimental results.
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