Abstract
This article focuses on the study of redial displacement, the carrier density, the conductive and thermodynamic temperatures and the stresses in a semiconductor medium with a spherical hole. This study deals with photo-thermoelastic interactions in a semiconductor material containing a spherical cavity. The new hyperbolic theory of two temperatures with one-time delay is used. The internal surface of the cavity is constrained and the density of carriers is photogenerated by a heat flux at the exponentially decreasing pulse boundaries. The analytical solutions by the eigenvalues approach under the Laplace transformation approaches are used to obtain the solution of the problem and the inversion of the Laplace transformations is performed numerically. Numerical results for semiconductor materials are presented graphically and discussed to show the variations of physical quantities under the present model.
Highlights
The thermoelastic theory, which is the most common engineered structural material, plays an important role in steel stresses analysis and applied mechanical sciences [1,2]
Youssef et al [8] have studied a new theory in generalized thermoelastic theories by the hyperbolic two-temperature model
Youssef and El-Bary [21] have discussed the characterizations of the photothermal interaction of a semiconducting solid sphere caused by the fractional deformations, the thermal delay times and various references temperature under Lord and Shoulman’s theory
Summary
The thermoelastic theory, which is the most common engineered structural material, plays an important role in steel stresses analysis and applied mechanical sciences [1,2]. Abbas et al [12] discussed the hyperbolic two-temperature photothermal interactions in semiconducting materials with cylindrical holes. Youssef and El-Bary [21] have discussed the characterizations of the photothermal interaction of a semiconducting solid sphere caused by the fractional deformations, the thermal delay times and various references temperature under Lord and Shoulman’s theory. Youssef and El-Bary [26] have studied the effects of the photothermal interactions under Lord-Shulman model on a visco-thermoelastic semiconducting solid cylinder caused by rotational movement. Mahdy et al [27] have investigated the variable thermal conductivity during photo-thermoelastic models of semiconductor material under a hyperbolic two-temperature model induced by laser pulses. Taking into account the photo-thermoelastic model coupled with the thermal and conductive temperatures is a significant phenomenon and has great effects on the distributions of the quantities of field
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