Abstract
The research of the influence of technological modes has been carried out and the negative influence of contaminating impurities on the lead iodide crystallization process has been grounded. The new technological approach to PbI2 single crystals growth has been proposed, which, unlike traditional methods, is based on increasing of the purity of the source components at the initial stage of technological process. The comparative analysis of the proposed growth technique with other known methods has been made, the efficiency of the purification operation of the Pb and I2 source components for the obtention and properties of PbI2 single crystals has been determined. The main types of defects during PbI2 crystallization from the melt have been analyzed and technological approaches for elimination of the structural violations have been proposed.
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