Abstract
The effect of intense X-ray irradiation on the short range structure and the thermal crystallization process in sputter deposited amorphous silicon films has been examined by extended energy-loss fine structure spectroscopy and transmission electron microscopy. The coordination number and the mean square disorder of the first neighbor shell in the amorphous state were increased following X-ray irradiation. The crystallization by post-annealing was delayed, the crystallized particles were dispersed homogeneously throughout the film, and the size of the individual particles was larger than in samples without X-ray irradiation. The above facts suggest that the number of unsaturated bonds is reduced by the X-ray irradiation, which can suppress the atomic diffusion and rearrangement, necessary for the crystallization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
