Abstract
The effect of vacuum annealing temperature on the characteristics of the fundamental absorption edge and short-range order reconstruction in amorphous hydrogenated silicon carbide (a-SiC:H) films obtained by magnetron sputtering of silicon in an Ar/CH4 mixture is experimentally investigated. It is shown that redistribution of chemically bound hydrogen occurs at low annealing temperatures (450°C). This redistribution is determined by (i) breakage of silicon-hydrogen bonds and (ii) trapping of atomic hydrogen by carbon dangling bonds. These processes lead to an enhancement of visible photoluminescence. Breakage of carbon-hydrogen bonds and clusterization of amorphous carbon occur at higher annealing temperatures. The proposition that the main nonradiative recombination centers in a-SiC:H films are electronic states related to the carbon dangling bonds is justified.
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