Abstract
The influence of underlying metals on hydrogen evolution from plasma-enhanced chemical vapor deposited silicon nitride (P-SiN) films was investigated. Titanium (Ti), tungsten (W), and tungsten silicide (WSix:x=2.3) cap layers were deposited onto pure-Al, Al-1%Si, Al-0.5%Cu and Al-1%Si-0.5%Cu films on oxidized silicon wafers. The bilayers and Al-alloys were covered with P-SiN films and heated. It was found that the hydrogen evolution rates for the P-SiN films were influenced by the underlying bilayers as well as Al-alloys. Copper (Cu) addition to underlying Al films raised the hydrogen evolution rate peak temperature for the cover P-SiN film, due to the suppression of cover P-SiN film blistering and cracking as a result of Al-Cu hardening. Titanium thin-film capping on the Al-alloy also raised the hydrogen evolution rate peak temperature for the P-SiN film, as results of Ti adhesive layer and thermally stable intermetallic compound formation, TiAl3.
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