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Abstract
The given work studies the reason of the change of a superfluous current near crystallization temperature of an amorphous αPbSb metal alloy and at the same time founds out the influence of ultrasonic processing (USP) on the properties of αPbSb-nSi solar elements (SE), made by Shottki diodes technology (ShD) with a metal alloy. It is found that occurrence of a superfluous current αPbSb-nSi ShD under the influence of thermoannealing is connected with changes of structure of an amorphous film of metal at transition in a polycrystalline condition. VAC damaged αPbSb-nSi Sh Dare very sensitive to annealing time. Eventually, even at room temperature, level of a superfluous current decreases, i.e. “the wound” put by mechanical damage sort of heals, restoration process occurs the faster, the higher the annealing temperature is. Function of γt annealing parameters changes in an interval and the influence USP on photo-electric properties αPbSb-nSi SE depends on the chosen UIT mode.
Highlights
In the literature devoted to physics and technology of contact metal-semiconductor, the processes occurring in contact piece are extensively studied, and it is considered that all these processes are connected with the semiconductor
The given work studies the reason of the change of a superfluous current near crystallization temperature of an amorphous αPbSb metal alloy and at the same time founds out the influence of ultrasonic processing (USP) on the properties of αPbSb-nSi solar elements (SE), made by Shottki diodes technology (ShD) with a metal alloy
The present activity is devoted to studying of change of a superfluous current in a αPbSb-nSi ShD close to the temperature of crystallization of an amorphous metal alloy, and simultaneously to studying of influence of UIT on the properties of a αPbSb-nSi SE sample made on ShD technology with a metal alloy
Summary
In the literature devoted to physics and technology of contact metal-semiconductor, the processes occurring in contact piece are extensively studied, and it is considered that all these processes are connected with the semiconductor. The present activity is devoted to studying of change of a superfluous current in a αPbSb-nSi ShD close to the temperature of crystallization of an amorphous metal alloy, and simultaneously to studying of influence of UIT on the properties of a αPbSb-nSi SE sample made on ShD technology with a metal alloy. Along with temperature change structural changes take place [7] in amorphous metal films which appear at small direct voltage of VAC degradation. In this connection it is of interest to study degradation (superfluous currents) properties which have arisen under the influence of thermoannealing, and study the influence of ultrasonic effect on photo-electric and electrophysical properties of semiconductor diodes and devices of this kind. The internal energy of solids, depending on absorption coefficient and intensity of ultrasound, various structural changes influencing both the photo-electric, electrophysical properties of materials and plastic deformation process are possible
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