Abstract
In an atmospheric pressure vertical reactor, with conditions designed to minimize predeposition of A1N (water-cooled walls), the growth rate of Al x Ga 1− x N grown from the TMG, TMA and NH 3 decreases rapidly with substrate temperatures above 900°C. The aluminum mole fraction of these films increases with temperatures above 1000°C with other growth parameters fixed. Furthermore, the Ga incorporation rate decreases with increasing TMA input flux at fixed TMG input flux and substrate temperature. A surface kinetic model in which both A1 and Ga compete for the same surface sites and the thermally ativated desorption of Ga from the surface plays a key role has been developed to explain these results. Addition of small amounts of SiH 4 (Si is a shallow donor in GaN) strongly reduces the incorporation rate of Ga but it does not affect that of A1.
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