Abstract
In this research, the powder mixing technology has been used to control the ratio of added, where the addition of tin oxide to the bismuth oxide of by (1,3,5,7)% by using vacuum evaporation method. The range of thickness for thin films (40-100)nm . EDX analysis shows the results of the ratios were close to the required values. XRD analysis shows pure bismuth oxide crystalline of the tetragonal phase (β-Bi2O3), observed that the structural properties improves with addition (1)% and the composition of a triangular compound (Bi64SnO98), and with addition (5)% we have a new triple compound (Bi12SnO20). By increasing the impurities, the structural properties become close from random, the tin oxide begins with bismuth oxide separation. AFM measurement shows the thin films surface a pekes like (nano needle) and the grain size rises to (20.2-22 nm). In the case of increased impurities, the surface becomes smooth, and the nano needle decrease with grain size . The optical properties showed a rise in the value of the optical power gap (2.6-3)eV and directly allowed transitions are simply increasing from (3.3-3.5) eV, and directly forbidden transitions are simply increasing to from (2.48-2.73) eV.
Highlights
Bismuth oxide Bi2O3 is one of the most important semiconductor substances that researchers are interested in studying [1] because of its optical and electrical properties such as large energy band gap, [2]
When increasing the addition to (X=0.07) gram,the analysis shows a one peak of the bismuth oxide at the angle (27.9) with the triple compound (Bi12SnO20) at angle (21.4) and the disappearance of compound (Bi64SnO98), other peaks in these diffraction are for tin dioxide, this is due to the increase in the percentage of added impurities and that the tin oxide has been separated from the bismuth oxide and tapped on the surface
Bismuth Oxide, Prepared by pressing and vacuum evaporation deposited on the glass substrate has β-phase
Summary
Bismuth oxide Bi2O3 is one of the most important semiconductor substances that researchers are interested in studying [1] because of its optical and electrical properties such as large energy band gap, [2]. It is known that Bismuth has five main polymorphic forms α–ß-γ-δ and ω [3] Each of them has polymorph possesses different crystal structures and various energy band gap and mechanical properties [4]. Bismuth was used as base material (1-X) and tin as an additive and in weight x=(0.01,0.03,0.05,0.07)gram, Table(1) shows. After adding the tin to the bismuth, mix the mixture using a mortar of Agate for a period of (60 minutes). Table(1) the weight of additions to prepare samples
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: JOURNAL OF UNIVERSITY OF BABYLON for Pure and Applied Sciences
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
