Abstract
This paper describes a new failure mechanism in W-plug vias, and the process conditions which enhance it. For submicron technologies, the limiting factor in interconnect reliability performance is increasingly dominated by the electromigration resistance of tungsten-plug vias. We have observed that under certain experimental conditions, early electromigration failures can be induced in via-chain test structures. We have demonstrated that these are caused by stress-induced void formation in the metal line immediately beneath the tungsten plug. This is thought to be due to highly localized film stress around the base of the plug, which can be minimized by increasing the thickness of the TiN anti-reflective coating (ARC). This has the effect of reducing the incidence of early failure by suppressing the stress-induced failures.
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