Abstract

The response characteristic of resistive oxygen sensors based on sputtered films and thin single crystals of SrTiO 3 has been investigated at high temperatures and different oxygen partial pressures. The frequency response function has been determined in the range 10 −2–2 × 10 3 Hz. Depending on the temperature of the sensor, the kinetic behaviour is controlled either by the surface transfer reaction of the oxygen or by the diffusion of oxygen vacancies in the bulk. The transfer reaction, which plays a decisive role in the development of fast oxygen sensors, was also investigated on single crystals of different thicknesses. The main influences determining the rate of chemical reaction are outlined.

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