Abstract
Different degrees of roughness were introduced to the surface of the substrates by HCl or oxygen plasma etching. The films were deposited by laser ablation. The surface morphology of the films of different thicknesses deposited on the annealed and etched substrates perpendicular to c-axis was compared to show the influence of the surface roughness of the surface on the growth of films. For SrTiO 3, a substrate surface roughness of peak-valley height of 10–20 Å was found not to increase the density of outgrowths but a roughness of 50 Å increased the density tremendously. For MgO, a roughness of 30–50 Å increased the density of outgrowths significantly. The surface morphology of films on MgO and SrTiO 3 substrates (annealed and etched) was compared to clarify the effect of a lattice mismatch. The density of outgrowths on the films on MgO was found to be much lower than that on SrTiO 3 for both the cases of annealed and etched substrates. This difference was discussed in relation to the origin of outgrowths.
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