Abstract
The island film growth on a substrate surface with triangular lattice is studied by a Monte Carlo simulation. The influence of the incident energy of the deposition particle (ion, atom, or cluster) on the film morphology is considered. The results show that the incident energy of the deposition particle affects strongly the film growth process. The island morphologies have a significant change with increasing incident energy E re from 0.0 to 30 eV. There is a critical energy region of about 4.0–5.0 eV; through this energy region the island morphologies change substantially. The total number of islands rises sharply as the energy ranges from 4.0 to 12.0 eV, and the total number of the islands reaches saturation as E re >25 eV. Our results also show that the stable island size changes from s=2 to 1 with increasing temperature.
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