Abstract
Visible and infrared (IR) electroluminescence (EL) has been observed from ametal–oxide–semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded inthe gate oxide fabricated with low-energy ion implantation. The EL spectra are found toconsist of four Gaussian-shaped luminescence bands with their peak wavelengths at∼460,∼600,∼740, and∼1260 nm, respectively,among which the ∼600 nm band is the dominant one. Different nanocrystal distributions are achieved by varyingthe implanted Si ion dose and implantation energy. The nanocrystal distribution is foundto play an important role in the EL. The influence of the applied voltage, theimplantation dose, and implantation energy on the luminescence bands has beeninvestigated.
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