Abstract
Visible and infrared (IR) electroluminescence (EL) has been observed from ametal–oxide–semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded inthe gate oxide fabricated with low-energy ion implantation. The EL spectra are found toconsist of four Gaussian-shaped luminescence bands with their peak wavelengths at∼460,∼600,∼740, and∼1260 nm, respectively,among which the ∼600 nm band is the dominant one. Different nanocrystal distributions are achieved by varyingthe implanted Si ion dose and implantation energy. The nanocrystal distribution is foundto play an important role in the EL. The influence of the applied voltage, theimplantation dose, and implantation energy on the luminescence bands has beeninvestigated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Nanotechnology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
