Abstract
Abstract Highly degenerate thin In2O3:Sn films were prepared by d.c. reactive sputtering of InSn alloy targets in ArO2 mixtures with a wide range of oxygen concentrations. The influence of both the oxygen concentration in the reactive mixture and the tin content of the target on the structure and electrical properties was studied. Hall measurements indicate that ionized impurities and interphase boundaries play a dominant role as causes of carrier scattering. The effectof post-deposition heat treatment in vacuum and in hydrogen was also studied. The considerable increase in the carrier concentration during reduction in hydrogen is explained in terms of the reduction mechanism.
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