The influence of the heating rate on the annealing behaviour of arsenic-implanted silicon

Abstract

Using channelling analysis the authors investigated the depth distributions of residual defects in arsenic-implanted silicon wafers (1*1016 cm-2,100 keV) annealed at 800 degrees C for 10 s, employing different heating rates of the samples (5-280 degrees C s-1). They observed that both the density and depth distribution of residual defects located at a depth corresponding to the arsenic projected range are markedly affected by the heating rate. They interpret this result by assuming that trapping of self-interstitials occurs during regrowth of the implantation-induced amorphised layer and that its efficiency is dependent on the regrowth rate.