Abstract
The doping characteristics of P-GaP layer in AlGaInP red LED has been studied, by changing the low pressure metal organic chemical vapor deposition (LP-MOCVD) system's growth temperature. Several epitaxial samples, which grown at different temperatures of LP-MOCVD, have been tested by ECV system. The results have been shown,that the doping density and the surface of GaP layer and the characteristics of the LED changed with the growth temperature of GaP layers. This experience can be used for the fabrication of high-performance AlGaInP red LED
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