Abstract
Due to the vanishing of both electron emission and capture rates, the DX centre shows a non-equilibrium occupancy at low temperature. It is shown that this effect results in a non-uniform free-electron density profile that can be controlled by biasing the junction during cooling. Preliminary results are reported showing that the I-V characteristics of Schottky barriers on AlGaAs (x=0.25) are affected by the DX centre occupation.
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