Abstract
A series of simulations are introduced to express the processes of the electron projection lithography quantitatively. It consists of the following three major steps: (1) electron trajectory simulation in an electron beam projection lithography optical system considering the Coulomb interaction effect among electrons and the lens aberrations, (2) electron energy deposition simulation in a resist on Si substrate, and (3) time evolution three-dimensional resist-development simulation. They are used to predict the error propagation characteristics in the sequence of lithography processes up to the three-dimensional resist structure after development. The influence of a variation in the exposure intensity on the final resist structure is demonstrated as an example.
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