Abstract
Three basically oriented, (100), (110) and (111) faces of monocrystalline and polycrystalline copper were irradiated in a high vacuum chamber with xenon energetic ions of 40 keV. The total xenon ion fluxes were 10 14 ions/cm 2. After the bombardment, the copper single crystals were heated stepwise by the electron beam in steps of a hundred degrees. The desorption of the entrapped gas was controlled by measuring the change of the radioactivity of embedded 133Xe. The results indicate the influence of the crystal orientation on the desorption of the incorporated gas.
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