Abstract
We report on the results of a study of the lateral photovoltaic effect in the Fe3O4/SiO2/n-Si(001) structure at temperatures of 300 and 122 K under continuous and pulsed illumination. It is found that when the temperature changes from 300 to 122 K, the LPE sensitivity decreases from 112 to 65 mV/mm. At pulsed illumination, an increase of rise time and a fall time is observed with decreasing temperature. From a consideration of the energy band diagrams and equivalent circuits of the Fe3O4/SiO2/n-Si structure, it is assumed that the detected temperature effects of LPE are due to the strong dependence of the magnetite film resistance on temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
