Abstract
This paper studies in detail the influence of growth temperature and the TMGa flow rate on the quality of p-GaN. Through Hall and atomic force microscope tests on six samples of two growth series, we can find that a higher growth temperature and lower TMGa flow rate can enhance the electrical properties and improve the surface morphology of the material, that is, lower resistivity, greater carrier concentration, higher mobility, and lower roughness. These two growth methods share similar processes to improve material properties. The enhancement of gallium atom migration is the reason for the improvement in surface morphology. The reduction in carbon impurities is key to improving electrical device performance through secondary ion mass spectroscopy and room temperature photoluminescence tests. Moreover, the severity of contamination on the sample surface is positively correlated with the roughness of the sample, which further illustrates the importance of better surface quality.
Highlights
As the representative of third-generation semiconductors, gallium nitride (GaN) and its related compounds are widely used in optoelectronic devices and power electronic devices because of their large bandgap, high thermal conductivity, and high carrier drift rate
The mechanism is explained from the perspective of impurities by secondary ion mass spectroscopy (SIMS) and room temperature photoluminescence (RTPL)
It can be seen from the figures and data that higher temperature and lower speed can improve the surface morphology to make the surface smoother and have fewer V-shaped pits
Summary
As the representative of third-generation semiconductors, gallium nitride (GaN) and its related compounds are widely used in optoelectronic devices and power electronic devices because of their large bandgap, high thermal conductivity, and high carrier drift rate. As an important part of these devices, high-quality p-GaN can further improve their performance. The mechanism is explained from the perspective of impurities by secondary ion mass spectroscopy (SIMS) and room temperature photoluminescence (RTPL) These two methods exhibit similar principles to improve the quality of the p-GaN layer. Through the SIMS test, it is found that the surfaces of these six samples are all polluted to different degrees and the degree of contamination and the roughness of the sample surface show an obvious positive correlation trend This can be used to characterize the surface properties of materials, and it illustrates the importance of surface quality in reducing pollution. All these studies on p-GaN can guide subsequent research and improvement better
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