Abstract
Single particle and collective intersubband excitations of two-dimensional electrons in GaAs/n − Al x Ga 1− x As quantum well structures are studied as a function of temperature and of incident light intensity. It is found that in the temperature range from 10 to 100 K there is no change in the subband spacing. With increasing laser excitation intensity, however, changes in both the single particle and collective excitations are observed.
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