Abstract
We report on the investigation of the dark current contributing mechanism by an effective SiO2 passivated layer deposited at low temperatures. In comparison with the unpassivated photodiodes, at 77 K, the dark current density is reduced by one order of magnitude and a maximum zero-bias resistance area product (R0A) of 567 Ω cm2 is achieved by introducing SiO2-passivated layer deposition technology at a lower temperature of 75°C. The temperature-dependence and bias-dependence of the dark current are studied experimentally and correlated to the theory, and then the fitting with experimental results shows good agreement between theory and experiment. The contribution of each dark current mechanism is also identified.
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