Abstract
Some electrical and magnetic properties of Gd-Co films obtained by dc sputtering with bias voltage V b are discussed. We observed a decrease in the compensation temperature and in the anomalous Hall resistivity with increasing bias voltage while the specific resistivity increases. The anisotropy constant, however, increases up to V b = -200 V, where it reaches a maximum and then it decreases. Electrical conductivity of the films prepared with V b greater than -100 V showed tunneling character. We conclude that not only resputtering of Gd atoms but also oxidation of Gd takes place during deposition when bias voltage is applied.
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