Abstract
Stress migration of point and open-volume defects is an important problem in a wide variety of applications, ranging from semiconductor technology and basic metallurgical problems to ion implantation and surface modification. Often the driving force of the drift is the local stress field of other defects in the material, although other sources of residual stress as well as external loads play an important role. This paper concentrates on the behaviour of non-equilibrium vacancies in a non-uniformly strained material. Illustrative models of one-dimensional problems are developed and compared to available experimental results in different ion implanted materials.
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