Abstract
The effects of stoichiometric defects and foreign atom additions on steady-state creep of lead sulfide single crystals have been investigated in the temperature range 650°–700°C. Creep rates for undoped PbS increase with decreasing PS21/2 in the region where p-type sulfur excess crystals are obtained and then decrease with decreasing PS2−1/2 in the region where n-type, lead excess crystals are produced. Under the lowest sulfur pressures employed, creep rates are independent of composition. The maximum creep rate for a given temperature occurs at the sulfur pressure corresponding to stoichiometric PbS. Creep rates for PbS with ½ mole % Bi2S3 increase with decreasing PS21/4, and are independent of sulfur pressure for values below 10−4 atm, whereas creep rates for crystals doped with ½ or 1/20 mole % Ag2S decrease with decreasing PS2−1/4 and are independent of sulfur pressure below 10−3 atm. It is suggested that several different atomic defects control diffusion-limited creep in PbS, the predominant defect depending on compound composition and dopant concentration.
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