Abstract
This work studies the relation between the residual layer thickness and the patterned area size, fill factor and stamp thickness for identical stamps with opposite polarity (positive and negative) made in silicon and nickel. Important and different variations in the homogeneity of the residual layer are obtained in comparison with the values predicted by the theory. This will help to optimize stamp designs and choose appropriate process setups and parameters for nanoimprint with improved pattern transfer capability.
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