Abstract
AbstractThe influence of the Si‐based crystallization precursor on the quality of the resulted poly‐Si crystallized by 2ω YAG laser was investigated in this paper. Based on the simulation analysis, we suggested that the H content in crystallization precursor maybe one of main effect factors. It has been found that the lower H content in Si‐based precursor, the better crystallinity of the resulted poly‐Si is. By using the low H content Si‐based film as the precursor, the poly Silicon with the grain size of about 500 nm crystallized by 2ω YAG was obtained at the relatively optimal crystallization conditions. Meanwhile, a dehydrogenation process before laser crystallization also could be omitted. It would be beneficial to lower cost of crystallization of a‐Si (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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