Abstract
Calculations have been made of dc I-V characteristics of long p+-i-n+ diodes with deep levels showing a negative differential resistance region. The influence of the recombination center data, especially of the capture coefficients of both electrons and holes, cn and c−p, is discussed. The calculations show that cn only influences the high injection regime and the minimum voltage, whereas c−p only influences the prebreakdown region and the breakdown voltage; thus a new method arises to determine cn and c−p in the same sample. These results are confirmed in silicon p+-i-n+ diodes with the gold acceptor acting as recombination center. Theory and experimental results are in complete agreement for cn=3.2×10−8 cm3 s−1 and c−p=1×10−7 cm3 s−1. Finally, these values are compared with those given in the literature.
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