Abstract
A two-dimensional profile simulator [B.E. Volland et al., J. Vac. Sci. Technol. B 20 (6) (2002) 3111–3117] was applied to the simulation of the etching of high aspect ratio trenches into silicon by means of a gas chopping etching technique. Reactant transport is modeled by a two-dimensional diffuse reflection model in case of neutrals and by direct line-of-sight shadowing in case of ions. Good agreement of the simulated with the experimental profiles was observed for a wide range of aspect ratios and for different etching to deposition cycle timings. Variation of the reactant transport parameters of the simulation model leads to simulated profiles with nearly no RIE-Lag, which has to be experimentally confirmed in the future.
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