Abstract
Both lf- and hf-CV measurements are widely used for the investigation of MOS structures. The usual classical methods for analysing these measurements do not take into account that quantum effects occur in inversion (and accumulation) layers of such structures. The influence of these effects on the lf- and hf-capacitance of semiconductors is investigated. The results are compared with the classical ones. For the example of Si qualitative and quantitative conclusions on the influence of these effects are given. In addition consequences are investigated concerning the determination of the density of the interface states. Sowohl NF-als auch HF-CV-Messungen sind viel genutzte Verfahren zur Untersuchung von MOS-Strukturen. Die ublichen klassischen Verfahren zur Auswertung der Messungen berucksichtigen nicht, das in den Inversions- (und Akkumulations-)Schichten solcher Strukturen Quanteneffekte auftreten. Ihr Einflus auf die NF- und HF-Kapazitaten von Halbleitern wird hier untersucht, die Ergebnisse werden mit denen klassischer Berechnungen verglichen. Am Beispiel des Siliziums werden qualitative und quantitative Schlusfolgerungen uber den Einflus dieser Effekte gezogen. Auserdem werden die Konsequenzen untersucht, die sich fur die Bestimmung der Grenzflachenzustandsdichte ergeben.
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