Abstract
The studies of the influence of pico-second (4 × 10-13 sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irradiation energy, induced radiation defects are of cluster type. The behavior of main carrier mobility depending on temperature and irradiation dose is analyzed and charge carriers’ scattering mechanisms are clarified: on ionized impurities, on point radiation defects with transition into cluster formation. Dose dependencies of electrical conductivity and carrier mobility for samples of various specific resistivities are given.
Highlights
There are numerous publications devoted to the influence of irradiations, in particular high energy electron irradiation, on the properties of silicon crystal
The irradiation sources used in these works are conventional sources based on micro-second pulse beams
From the above given results, the following conclusions can be drawn: 1) In spite of low intensity, pico-second electron irradiation has a significant effect on the electrical-physical properties of silicon crystal
Summary
There are numerous publications devoted to the influence of irradiations, in particular high energy electron irradiation, on the properties of silicon crystal. For the first time very short pulses with pico-second duration (4 × 10−13 sec.) and electron beam with 3.5 MeV energy was applied which has scientific meaning for the study of very fast processes in-situ, e.g. interaction of irradiation with material, different chemical and biological reactions.
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