Abstract
It is established that doping (by means of ion implantation) of SiO 2 films with Si nanoinclusions (NI) (SiO 2:Si) by phosphorus results in an enhancement of the photoluminescence (PL) peak at ∼800 nm without a significant shift of it. This peak is believed to be linked with silicon NI serving as quantum dots (QD). Three mechanisms of PL enhancement are suggested. It is shown experimentally that the most probable mechanisms are: the passivation of broken bonds by phosphorus; the increase of donor centers in the NI. Theoretical investigation of the energy spectra and the energy of radiative transition in a QD with and without one donor center is provided. It is shown that the energy of radiative transition does not affected by the presence of a donor center.
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