Abstract
AbstractThe absorption spectra near the fundamental edge of gallium arsenide are measured in the temperature range of 4.2 to 500 K on samples with concentration of charged impurities from 1014 to 1019 cm−3. The description of the experiment by phenomenologically broadened theoretical spectra enables to determine the broadening parameter as a function of temperature and impurity concentration. The comparison of the results obtained with microscopic theories shows the interactions of excitons with longitudinal optical phonons and charged impurities to be the main broadening mechanisms. A semiempirical equation is obtained which permits to calculate the broadening parameter in gallium arsenide for a given temperature and impurity concentration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
