The influence of oxygen vacancies on piezoelectricity in samarium‐doped Pb(Mg1/3Nb2/3)O3‐PbTiO3 ceramics

Abstract

AbstractA study of 0.71Pb(Mg1/3Nb2/3)O3‐0.29PbTiO3 shows that, when it is doped with 2.5% Sm on the A‐site, in addition to an almost threefold increase in piezoelectric charge coefficient and dielectric permittivity, there is a 2 order of magnitude reduction in conductivity, attributed to a decrease in oxygen vacancy concentration. An analysis of the nonlinearity of permittivity with respect to field amplitude shows that both the reversible and irreversible contributions increase significantly with Sm‐doping, with simple models showing that these changes are consistent with a reduction in the concentration of dipolar defects that can inhibit both polarization rotation and domain wall translation. Contrary to the argument that doping increases heterogeneity, there is little change in the diffuseness of the peak in permittivity as a function temperature, whilst there is a 15% increase in spontaneous polarization with Sm addition. Through comparison of the Rayleigh law parameters with those published for other piezoelectric materials, it is concluded that a significant contribution to the observed increase in piezoelectric performance due to Sm‐doping of PMN‐PT is similar in origin to that seen in soft, donor‐doped PZT and other conventional piezoelectric ceramics.