Abstract
Eu3+-doping has been of interest to improve the luminescent characteristics of thin-film phosphors. Y2O2S:Eu3+ films have been grown on Si (100) substrates by using a Pulsed Laser Deposition technique. The thin films grown under different oxygen deposition pressure conditions have been characterized using structural and luminescent measurements. The X-ray diffraction patterns showed mixed phases of cubic and hexagonal crystal structures. As the oxygen partial pressure increased, the crystallinity of the films improved. Further increase of the O2 pressure to 140mtorr reduced the crystallinity of the film. Similarly, both scanning electron microscopy and Atomic Force Microscopy confirmed that an increase in O2 pressure affected the morphology of the films. The average band gap of the films calculated from diffuse reflectance spectra using the Kubelka–Munk function was about 4.75eV. The photoluminescence measurements indicated red emission of Y2O2S:Eu3+ thin films with the most intense peak appearing at 619nm, which is assigned to the 5D0–7F2 transition of Eu3+. This most intense peak was totally quenched at higher O2 pressures. This phosphor may be a promising material for applications in the flat panel displays.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
